 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25C) Ratings 60 50 15 1.5 0.7 1.0 150 -55 ~ +150 1cm2 Unit 0.45-0.05 0.45-0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg 2.50.5 1 2 2.50.5 3 V V A A W C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.50.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob *1 Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA IC = 500mA, IB = 50mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 10 14.50.5 Unit A A V V V 60 50 15 400 0.15 200 11 15 2000 0.4 VCE(sat) V MHz pF *1h FE Rank classification R 400 ~ 800 S T Rank hFE 600 ~ 1200 1000 ~ 2000 1 Transistor PC -- Ta 2.0 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C IB=100A 100 2SC5335 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 Ta=75C 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) Collector current IC (mA) 1.6 90A 80 80A 70A 60 60A 50A 40 40A 30A 20 20A 10A 1.2 0.8 -25C 0.4 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC 100 hFE -- IC Collector output capacitance Cob (pF) IC/IB=10 1800 VCE=10V 24 Cob -- VCB f=1MHz IE=0 Ta=25C Base to emitter saturation voltage VBE(sat) (V) 30 10 3 25C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 75C Forward current transfer ratio hFE 1500 20 1200 Ta=75C 25C 16 900 -25C 600 12 8 300 4 0 1 3 10 30 100 300 1000 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) 2 |
Price & Availability of 2SC5335
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |